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important notice dear customer, on 7 february 2017 the former nxp standard product business became a new compa ny with the tradename nexperia . nexperia is an industry leading supplier of discrete, logic and pow ermos semiconductors with its focus on the automotive, industrial, computing, consume r and wearable application markets in data sheets and application notes which still contain nxp or philips se miconductors references, use the references to nexperia, as shown below. instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors .philips.com/ , use http://www.nexperia.com instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) replace the copyright notice at the bottom of each page or elsewher e in the document, depending on the version, as shown below: - ? nxp n.v. (year). all rights reserved or ? koninklijke philips electronics n.v. (year). all rights reserved should be replaced with: - ? nexperia b.v. (year). all rights reserved . if you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com ). thank you for your cooperation and understanding, kind regards, team nexperia downloaded from: http:///
1. product pro?e 1.1 general description low capacitance double bidirectional electrostatic discharge (esd) protection diodes in a sot23 small surface mounted device (smd) plastic package designed to protect two signal lines from the damage caused by esd and other transients. 1.2 features 1.3 applications 1.4 quick reference data pesdxl2bt series low capacitance double bidirectional esd protection diodes in sot23 rev. 02 ?25 august 2009 product data sheet esd protection of two lines ultra low leakage current: i rm <90na max. peak pulse power: p pp = 350 w esd protection up to 23 kv low clamping voltage: v cl =26v iec 61000-4-2, level 4 (esd) small smd plastic package iec 61000-4-5 (surge); i pp =15a computers and peripherals communication systems audio and video equipment portable electronics cellular handsets and accessories subscriber identity module (sim) card protection table 1. quick reference data symbol parameter conditions min typ max unit v rwm reverse standoff voltage pesd3v3l2bt - - 3.3 v pesd5v0l2bt - - 5.0 v PESD12VL2BT - - 12 v pesd15vl2bt - - 15 v pesd24vl2bt - - 24 v c d diode capacitance v r =0v; f=1mhz pesd3v3l2bt - 101 - pf pesd5v0l2bt - 75 - pf PESD12VL2BT - 19 - pf pesd15vl2bt - 16 - pf pesd24vl2bt - 11 - pf downloaded from: http:///
pesdxl2bt_ser_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ?25 august 2009 2 of 14 nxp semiconductors pesdxl2bt series low capacitance double bidirectional esd protection diodes in sot23 2. pinning information 3. ordering information 4. marking [1] * = -: made in hong kong * = p: made in hong kong * = t: made in malaysia * = w: made in china table 2. pinning pin description simpli?d outline symbol 1 cathode 1 2 cathode 2 3 double cathode 12 3 2 1 006aaa155 3 table 3. ordering information type number package name description version pesd3v3l2bt - plastic surface mounted package; 3 leads sot23 pesd5v0l2bt PESD12VL2BT pesd15vl2bt pesd24vl2bt table 4. marking codes type number marking code [1] pesd3v3l2bt v3* pesd5v0l2bt v4* PESD12VL2BT v5* pesd15vl2bt v6* pesd24vl2bt v7* downloaded from: http:///
pesdxl2bt_ser_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ?25 august 2009 3 of 14 nxp semiconductors pesdxl2bt series low capacitance double bidirectional esd protection diodes in sot23 5. limiting values [1] non-repetitive current pulse 8/20 s exponential decay waveform according to iec 61000-4-5. [2] measured from pin 1 to 3 or 2 to 3. [1] device stressed with ten non-repetitive esd pulses. [2] measured from pin 1 to 3 or 2 to 3. table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit p pp peak pulse power t p = 8/20 s [1] [2] pesd3v3l2bt - 350 w pesd5v0l2bt - 350 w PESD12VL2BT - 200 w pesd15vl2bt - 200 w pesd24vl2bt - 200 w i pp peak pulse current t p = 8/20 s [1] [2] pesd3v3l2bt - 15 a pesd5v0l2bt - 13 a PESD12VL2BT - 5 a pesd15vl2bt - 5 a pesd24vl2bt - 3 a t j junction temperature - 150 c t amb ambient temperature ? 65 +150 c t stg storage temperature ? 65 +150 c table 6. esd maximum ratings symbol parameter conditions min max unit v esd electrostatic discharge voltage iec 61000-4-2 (contact discharge) [1] [2] pesd3v3l2bt - 30 kv pesd5v0l2btPESD12VL2BT pesd15vl2bt pesd24vl2bt - 23 kv pesdxl2bt series hbm mil-std883 - 10 kv table 7. esd standards compliance esd standard conditions iec 61000-4-2, level 4 (esd) > 15 kv (air); > 8 kv (contact) hbm mil-std883, class 3 > 4 kv downloaded from: http:///
pesdxl2bt_ser_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ?25 august 2009 4 of 14 nxp semiconductors pesdxl2bt series low capacitance double bidirectional esd protection diodes in sot23 fig 1. 8/20 s pulse waveform according to iec 61000-4-5 fig 2. esd pulse waveform according to iec 61000-4-2 t ( s) 04 0 30 10 20 001aaa630 40 80 120 i pp (%) 0 e ? t 100 % i pp ; 8 s 50 % i pp ; 20 s 001aaa631 i pp 100 % 90 % t 30 ns 60 ns 10 % t r = 0.7 ns to 1 ns downloaded from: http:///
pesdxl2bt_ser_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ?25 august 2009 5 of 14 nxp semiconductors pesdxl2bt series low capacitance double bidirectional esd protection diodes in sot23 6. characteristics table 8. characteristics t amb =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit v rwm reverse standoff voltage pesd3v3l2bt - - 3.3 v pesd5v0l2bt - - 5.0 v PESD12VL2BT - - 12 v pesd15vl2bt - - 15 v pesd24vl2bt - - 24 v i rm reverse leakage current pesd3v3l2bt v rwm = 3.3 v - 0.09 2 a pesd5v0l2bt v rwm = 5.0 v - 0.01 1 a PESD12VL2BT v rwm =12v - <1 50 na pesd15vl2bt v rwm =15v - <1 50 na pesd24vl2bt v rwm =24v - <1 50 na v br breakdown voltage i r =5ma pesd3v3l2bt 5.8 6.4 6.9 v pesd5v0l2bt 7.0 7.6 8.2 v PESD12VL2BT 14.2 15.8 16.7 v pesd15vl2bt 17.1 18.8 20.3 v pesd24vl2bt 25.4 27.8 30.3 v c d diode capacitance v r =0v; f=1mhz pesd3v3l2bt - 101 - pf pesd5v0l2bt - 75 - pf PESD12VL2BT - 19 - pf pesd15vl2bt - 16 - pf pesd24vl2bt - 11 - pf v cl clamping voltage [1] [2] pesd3v3l2bt i pp =1a - - 8 v i pp =15a - - 26 v pesd5v0l2bt i pp =1a - - 10 v i pp =13a - - 28 v PESD12VL2BT i pp =1a - - 20 v i pp =5a - - 37 v pesd15vl2bt i pp =1a - - 25 v i pp =5a - - 44 v pesd24vl2bt i pp =1a - - 40 v i pp =3a - - 70 v downloaded from: http:///
pesdxl2bt_ser_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ?25 august 2009 6 of 14 nxp semiconductors pesdxl2bt series low capacitance double bidirectional esd protection diodes in sot23 [1] non-repetitive current pulse 8/20 s exponential decay waveform according to iec 61000-4-5. [2] measured from pin 1 to 3 or 2 to 3. r dif differential resistance i r =1ma pesd3v3l2bt - - 400 pesd5v0l2bt - - 80 PESD12VL2BT - - 200 pesd15vl2bt - - 225 pesd24vl2bt - - 300 table 8. characteristics continued t amb =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit downloaded from: http:///
pesdxl2bt_ser_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ?25 august 2009 7 of 14 nxp semiconductors pesdxl2bt series low capacitance double bidirectional esd protection diodes in sot23 t amb =25 c (1) pesd3v3l2bt and pesd5v0l2bt (2) PESD12VL2BT, pesd15vl2bt, pesd24vl2bt fig 3. peak pulse power as a function of exponential pulse duration t p ; typical values fig 4. relative variation of peak pulse power as a function of junction temperature; typical values t amb =25 c; f = 1 mhz (1) pesd3v3l2bt (2) pesd5v0l2bt t amb =25 c; f = 1 mhz (1) PESD12VL2BT (2) pesd15vl2bt (3) pesd24vl2bt fig 5. diode capacitance as a function of reverse voltage; typical values fig 6. diode capacitance as a function of reverse voltage; typical values 006aaa531 10 3 10 2 10 4 p pp (w) 10 t p ( s) 11 0 4 10 3 10 10 2 (1) (2) t j ( c) 0 200 150 50 100 001aaa193 0.4 0.8 1.2 p pp 0 p pp(25 c) v r (v) 05 4 23 1 006aaa067 70 90 100 110 c d (pf) 50 60 80 (1) (2) v r (v) 02 5 20 10 15 5 006aaa068 8 12 4 16 20 c d (pf) 0 (1) (2) (3) downloaded from: http:///
pesdxl2bt_ser_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ?25 august 2009 8 of 14 nxp semiconductors pesdxl2bt series low capacitance double bidirectional esd protection diodes in sot23 (1) pesd3v3l2bt, pesd5v0l2bt PESD12VL2BT, pesd15vl2bt and pesd24vl2bt: i rm < 20 na; t j = 150 c fig 7. relative variation of reverse leakage current as a function of junction temperature; typical values fig 8. v-i characteristics for a bidirectional esd protection diode 006aaa069 1 10 10 ? 1 t j ( c) ? 100 150 100 05 0 ? 50 i rm i rm(25 c) (1) 006aaa676 ? v cl ? v br ? v rwm v cl v br v rwm ? i rm i rm ? i r i r ? i pp i pp ? + downloaded from: http:///
pesdxl2bt_ser_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ?25 august 2009 9 of 14 nxp semiconductors pesdxl2bt series low capacitance double bidirectional esd protection diodes in sot23 fig 9. esd clamping test setup and waveforms 006aaa162 50 r z c z d.u.t. (device under test) vertical scale = 200 v/div horizontal scale = 50 ns/div unclamped + 1 kv esd voltage waveform (iec 61000-4-2 network) clamped + 1 kv esd voltage waveform (iec 61000-4-2 network) unclamped ? 1 kv esd voltage waveform (iec 61000-4-2 network) clamped ? 1 kv esd voltage waveform (iec 61000-4-2 network) vertical scale = 200 v/div horizontal scale = 50 ns/div vertical scale = 20 v/div; horizontal scale = 50 ns/div vertical scale = 20 v/div; horizontal scale = 50 ns/div gndgnd 450 rg 223/u 50 coax esd tester iec 61000-4-2 networkc z = 150 pf; r z = 330 4 ghz digital oscilloscope 10 attenuator gndgnd gnd gnd gnd gndgnd gnd gnd gnd pesd3v3l2bt pesd5v0l2bt PESD12VL2BT pesd15vl2bt pesd24vl2bt pesd3v3l2bt pesd5v0l2bt PESD12VL2BT pesd15vl2bt pesd24vl2bt downloaded from: http:///
pesdxl2bt_ser_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ?25 august 2009 10 of 14 nxp semiconductors pesdxl2bt series low capacitance double bidirectional esd protection diodes in sot23 7. application information the pesdxl2bt series is designed for the protection of two bidirectional signal lines from the damage caused by esd and surge pulses. the pesdxl2bt series may be used on lines where the signal polarities are above and below ground. the pesdxl2bt series provides a surge capability of up to 350 w per line for an 8/20 s waveform. circuit board layout and protection device placement circuit board layout is critical for the suppression of esd, electrical fast transient (eft) and surge transients. the following guidelines are recommended: 1. place the pesdxl2bt as close to the input terminal or connector as possible. 2. the path length between the pesdxl2bt and the protected line should be minimized. 3. keep parallel signal paths to a minimum. 4. avoid running protected conductors in parallel with unprotected conductors. 5. minimize all printed-circuit board (pcb) conductive loops including power and ground loops. 6. minimize the length of the transient return path to ground. 7. avoid using shared transient return paths to a common ground point. 8. ground planes should be used whenever possible. for multilayer pcbs, use ground vias. fig 10. application diagram 006aaa163 gnd pesdxl2bt line 2 to be protected line 1 to be protected downloaded from: http:///
pesdxl2bt_ser_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ?25 august 2009 11 of 14 nxp semiconductors pesdxl2bt series low capacitance double bidirectional esd protection diodes in sot23 8. package outline 9. packing information [1] for further information and the availability of packing methods, see section 12 . fig 11. package outline sot23 (to-236ab) 04-11-04 dimensions in mm 0.450.15 1.9 1.10.9 3.02.8 2.52.1 1.41.2 0.480.38 0.150.09 12 3 table 9. packing methods the indicated -xxx are the last three digits of the 12nc ordering code. [1] type number package description packing quantity 3000 10000 pesd3v3l2bt sot23 4 mm pitch, 8 mm tape and reel -215 -235 pesd5v0l2bt PESD12VL2BT pesd15vl2bt pesd24vl2bt downloaded from: http:///
pesdxl2bt_ser_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ?25 august 2009 12 of 14 nxp semiconductors pesdxl2bt series low capacitance double bidirectional esd protection diodes in sot23 10. revision history table 10. revision history document id release date data sheet status change notice supersedes pesdxl2bt_ser_2 20090825 product data sheet - pesdxl2bt_ser_1 modi?cations: this data sheet was changed to re?ect the new company name nxp semiconductors, including new legal de?nitions and disclaimers. no changes were made to the technical content. t ab le 2 pinning : amended pesdxl2bt_ser_1 20051101 product data sheet - - downloaded from: http:///
pesdxl2bt_ser_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ?25 august 2009 13 of 14 nxp semiconductors pesdxl2bt series low capacitance double bidirectional esd protection diodes in sot23 11. legal information 11.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. the latest product status information is available on the internet at url http://www .nxp .com . 11.2 de?itions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 11.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. export control this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. quick reference data the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 11.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 12. contact information for more information, please visit: http://www .nxp.com for sales of?ce addresses, please send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?ition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation. downloaded from: http:///
nxp semiconductors pesdxl2bt series low capacitance double bidirectional esd protection diodes in sot23 ?nxp b.v. 2009. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 25 august 2009 document identifier: pesdxl2bt_ser_2 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 13. contents 1 product pro?e . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7 application information. . . . . . . . . . . . . . . . . . 10 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 9 packing information. . . . . . . . . . . . . . . . . . . . . 11 10 revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 11 legal information. . . . . . . . . . . . . . . . . . . . . . . 13 11.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 11.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 11.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 11.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 12 contact information. . . . . . . . . . . . . . . . . . . . . 13 13 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 downloaded from: http:///

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